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MITSUBISHI SEMICONDUCTOR
MGFS36E3436A
Specifications are subject to change without notice.
3.4-3.6GHz HBT HYBRID IC
Outline Drawing
DESCRIPTION
MGFS36E3436A is a GaAs RF amplifier designed for WiMAX CPE.
4.5 1.0
FEATURES
* * * * * * * * * * InGaP HBT Device 6V Operation 30dB Linear Gain 2.5% EVM at an Output power of 25dBm 4% EVM at an Output power of 27dBm Integrated Output Power Detector Integrated 1-bit 21dB Step Attenuator 50 Matched Input/Output Ports Surface Mount Package RoHS Compliant Package
4.5
36E 3436A 2527 (Lot No.)
10
9
8
7
6
APPLICATIONS
IEEE802.16-2004, IEEE802.16e-2005
1 2 3 4 5 (X-ray Top View)
1 2 3 4 5 6 7 8 9 10
Pin Vc (Vcb) Vc (Vc1) Vc (Vc2) Vc (Vc3) Pout Po_det GND Vref Vcont
DIM IN mm
FUNCTIONAL BLOCK DIAGRAM
Vc1
1000pF
Vc2
Vc3
1000pF 1000pF
Pin Vcont (0/3V) Vcb
1000pF
Pout
Bias Circuit
Vref
Po_det
33kohms 15kohm
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/8) July-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E3436A
Specifications are subject to change without notice.
3.4-3.6GHz HBT HYBRID IC
Conditions* Pout27.0dBm Pout27.0dBm Pout27.0dBm Value 8 3 3.3 180 Unit V V V mA mA mA dBm % C C
ABSOLUTE MAXIMUM RATINGS (Tc=25C)
Symbol Vc1, Vc2 Vc3, Vcb Vref Vcont Ic1 Ic2 Ic3 Pin Tc(op) Tstg Input Power Duty Cycle Operation Temperature Storage Temperature Pout27.0dBm Pout27.0dBm Pout27.0dBm Operation Current Pout27.0dBm Parameter Collector Supply Voltage Reference Voltage ATT Control Voltage
250 900 5 50 -40~+85 -40~+125
*NOTE : Zin=Zout=50 Each maximum rating is guaranteed independently. Please take care that MGFS36E3436A is operated under these conditions at the worst case on your terminal.
ELECTRICAL CHARACTERISTICS (Tc=25C, Vc=6V, Vref=2.85V, Duty Cycle < 50%, 64QAM OFDM Modulation)
Symbol f Gp t Pout Parameter Frequency Gain Efficiency Output Power Spectrum Mask EVM Meets Pout=27dBm ETSI EN302-326, EqC-PET=O, EqC-EMO=4 ETSI EN302-326, EqC-PET=O, EqC-EMO=6 Pout=25dBm Pout=27dBm Pout=25dBm Pout=27dBm Vcont=3V Vc=6V, Vref=0V Test Conditions* Min 3.4 30 11 28 26 2.5 4 1.7 2.0 21 10 % Limits Typ Max 3.6 GHz dB % dBm Unit
EVM
Vdet ATT Ileak
Power Detector Voltage Control Gain Step Leakage Current
V dB A
*NOTE : Zin=Zout=50
ESD RATING
- Class 1A (HBM) - Level 3
MOISTURE SENSITIVITY LEVEL THERMAL RESISTANCE :
30C/W
MITSUBISHI ELECTRIC CORP.
(2/8) July-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E3436A
Specifications are subject to change without notice.
3.4-3.6GHz HBT HYBRID IC
PERFORMANCE DATA
Vc=6V, Vref=2.85V, Vcont=0V, Duty Cycle=50% WiMAX OFDM 64QAM signal input. Tc=25degC. Output Power vs. Input Power
30
Efficiency vs. Output Power
20 18 16
Output Power (dBm)
25 14 Efficiency (%) 3.4GHz 3.5GHz 3.6GHz 10 -20 -15 -10 Input Power (dBm) -5 0 12 10 8 6 4 2 0 10 15 20 Output Power (dBm) 25 30 3.4GHz 3.5GHz 3.6GHz
20
15
EVM vs. Output Power
6.0 5.5 5.0 4.5 4.0 EVM (%)
Detector Voltage vs. Output Power
3.0 2.5 2.0 Vdet (V) 1.5 1.0 0.5 3.4GHz 3.5GHz 3.6GHz 10 15 20 Output Power (dBm) 25 30
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10 15 20 Output Power (dBm) 25 3.4GHz 3.5GHz 3.6GHz 30
0.0
Attenuation Performance
40 Vcont=0V Vcont=3V 30 S21 (dB)
20
10
0 3.0 3.2 3.4 3.6 3.8 4.0 Frequency (GHz)
MITSUBISHI ELECTRIC CORP.
(3/8) July-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E3436A
Specifications are subject to change without notice.
3.4-3.6GHz HBT HYBRID IC
Vc=6V, Vref=2.85V, Vcont=0V, Duty Cycle=50% f=3.5GHz, WiMAX OFDM 64QAM signal input. Output Power vs. Input Power
30
Efficiency vs. Output Power
20 18 16
Output Power (dBm)
25 14 Efficiency (%) -40degC 0degC 25degC 60degC 85degC -25 -20 -15 -10 Input Power (dBm) -5 0 12 10 8 6 4 2 0 10 15 20 Output Power (dBm) 25 30 -40degC 0degC 25degC 60degC 85degC
20
15
10
EVM vs. Output Power
6.0 5.5 5.0 4.5 4.0 EVM (%)
Detector Voltage vs. Output Power
3.0 2.5 2.0 Vdet (V) 1.5 1.0 0.5 -40degC 0degC 25degC 30 60degC 85degC 0.0 10 15 20 Output Power (dBm) 25 30 -40degC 0degC 25degC 60degC 85degC
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10 15 20 Output Power (dBm) 25
Attenuation Level
24 23 Attenuation Level (dB) 22 21 20 19 18 -40 -20 0 20 40 60 Case Temperature (degC) 80 100
MITSUBISHI ELECTRIC CORP.
(4/8) July-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E3436A
Specifications are subject to change without notice.
3.4-3.6GHz HBT HYBRID IC
Vc=6V, Vref=2.85V, Vcont=0V, Duty Cycle=50% WiMAX OFDM 64QAM signal input. Tc=25degC. Output Power vs. Distortion
-10 -15 -20
Distortion (dBc)
-10
f=3.4GHz f=3.5GHz f=3.6GHz 3.5MHz offset
-15 -20 Distortion (dBc) -25 -30 -35 -40 -45 -50 -55
f=3.4GHz f=3.5GHz f=3.6GHz
5MHz offset
-25 -30 -35 -40 -45 -50 -55 10 12 14 16 18 20 22 24 26 28 30 Output Power (dBm)
10 12 14 16 18 20 22 24 26 28 30 Output Power (dBm)
-20 -25 -30 -35
Distortion (dBc)
f=3.4GHz f=3.5GHz f=3.6GHz
7.4MHz offset
-40 -45 -50 -55 -60 -65 -70 10 12 14 16 18 20 22 24 26 28 30 Output Power (dBm)
-10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
f=3.4GHz f=3.5GHz f=3.6GHz
14MHz offset
Distortion (dBc)
10 12 14 16 18 20 22 24 26 28 30 Output Power (dBm)
* RBW * VBW * Att * SWT
Spectrum Emission Mask
* RBW 30 kHz * VBW 300 Hz * Att * SWT 9.2 s
Marker 3 [T1 ] -37.71 dBm 3.495000000 GHz Marker 1 [T1 ] -1.29 dBm 3.501626603 GHz Marker 2 [T1 ] -38.45 dBm
TRG 3.505000000 GHz LVL A 1 RM * VIEW
30 kHz 300 Hz 9.2 s
Marker 3 [T1 ] -30.29 dBm 3.495000000 GHz Marker 1 [T1 ] 0.97 dBm 3.501626603 GHz Marker 2 [T1 ]
A
Ref
20
20 dBm Offset 30.6 dB
0 dB
Ref
20
20 dBm Offset 30.6 dB
0 dB
10 1 RM * VIEW
10
1
0
1
0
-29.55 dBm
TRG 3.505000000 GHz LVL
-10
-10
-20
-20
3
-30 EXT -30
2
EXT 3DB
3
-40
2
3DB -40
ETSI-F ETSI-G -50
-50
-60
-60
-70
-70
-80
-80
Center
3.5 GHz
3.5 MHz/
Span
35 MHz
Center
3.5 GHz
3.5 MHz/
Span
35 MHz
Pout(max.)=26dBm for EqC-EMO=6
Date: 20.DEC.2007 13:40:42
Pout(max.)=28dBm for EqC-EMO=4
Date: 20.DEC.2007 13:39:42
MITSUBISHI ELECTRIC CORP.
(5/8) July-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E3436A
Specifications are subject to change without notice.
3.4-3.6GHz HBT HYBRID IC
Vc=6V, Vref=2.85V, Vcont=0V, Duty Cycle=50% f=3.5GHz, WiMAX OFDM 64QAM signal input. Output Power vs. Distortion
-10 -15 -20
Distortion (dBc) Ta=-30deg C. Ta=+25deg C. Ta=+60deg C
-10
3.5MHz offset
-15 -20
Distortion (dBc)
Ta=-30deg C. Ta=+25deg C. Ta=+60deg C
5MHz offset
-25 -30 -35 -40 -45 -50 -55 10 12 14 16 18 20 22 24 26 28 30 Output Power (dBm) -20 -25 -30 -35
Ta=-30deg C. Ta=+25deg C. Ta=+60deg C
-25 -30 -35 -40 -45 -50 -55 10 12 14 16 18 20 22 24 26 28 30 Output Power (dBm) -20
Ta=-30deg C. Ta=+25deg C. Ta=+60deg C
7.4MHz offset
-25 -30 -35
Distortion (dBc)
14MHz offset
Distortion (dBc)
-40 -45 -50 -55 -60 -65 -70 10 12 14 16 18 20 22 24 26 28 30 Output Power (dBm)
-40 -45 -50 -55 -60 -65 -70 10 12 14 16 18 20 22 24 26 28 30 Output Power (dBm)
MITSUBISHI ELECTRIC CORP.
(6/8) July-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E3436A
Specifications are subject to change without notice.
3.4-3.6GHz HBT HYBRID IC
APPLICATION CIRCUIT
5 0 oh m s
RF Input
Pin Vcb Vc1 Vc2
Vcont Vref
1000pF
Attenuator Control Reference Voltage Detector Voltage Out RF Output
1000pF
GND Po_det
10nF 22nF
Supply Voltage
Vc3
1uF 1000pF
Pout
5 0 oh m s
Pulse Operation is controlled by Vref
PACKAGE OUTLINE
4.5 1st pin mark
1.3 (max) 1.0 (typ) 4.5 4.1 3.6 1.8
0.3
0.3 3.65 2.65
Dimension in millimeters. Unless specified tolerance 0.2mm.
0.5 0.5
MITSUBISHI ELECTRIC CORP.
(7/8) July-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E3436A
Specifications are subject to change without notice.
3.4-3.6GHz HBT HYBRID IC
HANDLING PRECAUTION
1) Work desk, test equipment, soldering iron and worker should be grounded before mounting and testing. Please note that electric discharge of GaAs HBT is much more sensitive than that of Si transistor. Handling without ground possibly damages GaAs HBT. The surface of a board on which this product is mounted should be as flat and clean as possible to prevent a substrate from cracking by bending this product. IR reflow soldering condition is confirmed following profile.
2)
3)
260degC 225degC (PKG Surface temp.) 10sec 70sec
180+/-10degC 120+/-20sec
4) Handling precaution at high temperature This product has the structure of sealing with epoxy resin on grass epoxy substrate. This epoxy resin gets soft if the temperature exceeds glass transition temperature=120degC, and the thermic decomposition is occurred if the temperature exceeds 350degC. Therefore, in case of heating this product, please keep the same heat profile as recommended reflow one. Please note that crack, flaw or modification may be generated if softened epoxy resin part is handled with tweezers and etc at high temperature. Cleaning condition Please select after confirming administrative guidance, legal restrictions, and the mass of the residual ion contaminant etc., and use it. After soldering, please remove the flux. Please take care that solvent does not penetrate into this product. GaAs HBT contains As(Arsenic). This product should be dumped as particular industrial waste.
5)
6)
7)
MITSUBISHI ELECTRIC CORP.
(8/8) July-2008

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